Wuhan University of Science and Technology | China
Da Wan is an Associate Professor at Wuhan University of Science and Technology, specializing in advanced nanoelectronics and emerging information device technologies. His research focuses on the design, fabrication, and performance optimization of high-performance nanoelectronic devices based on novel two-dimensional semiconductors and metal oxide materials. He has established a strong academic profile through impactful contributions to leading international journals, publishing several high-quality SCI papers as both first and corresponding author. His work appears in prestigious outlets such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Nanoscale, and Journal of Physics D. In addition, he has contributed collaboratively to numerous publications in top-tier journals, including Angewandte Chemie, Advanced Functional Materials, Small, and ACS Applied Materials & Interfaces, reflecting his active engagement in cutting-edge materials and device research.
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Featured Publications
Rational Fabrication of Dual-Channel Layered InGaSnO Thin-Film Transistors Through High-/Low-Power Sputtering Technique
– IEEE Transactions on Electron Devices
MoTe2/MoSe2 vdW Schottky Photodetector for Polarized Photodetection
– Chip
Enhancing the Electrical Performance and Stability of Hf-Doped InZnO Thin Film Transistors Using Dual-Target Co-Sputtering Technique
– Applied Physics Letters
Effects of Different Contents Yttrium Doping on the Electrical Performance and Stability of Bilayer IZO/IYZO Thin-Film Transistors
– Applied Physics Letters